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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 DESCRIPTION With TO-220Fa package High breakdown voltage Low collector saturation voltage Complement to type 2SB1016 APPLICATIONS Power amplifier applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector -emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 100 100 5 5 0.5 UNIT V V V A A W ae ae Emitter-base voltage Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA; IB=0 IC=4A; IB=0.4A IC=1A; VCE=5V VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A; VCE=5V f=1MHz ; VCB=10V;IE=0 40 20 MIN 100 TYP. 2SD1407 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V 2.0 1.5 100 1.0 240 |I V V A mA hFE-1 Classifications R 40-80 IN O 70-140 Y 120-240 CHA E SEM NG OND IC TOR UC 12 100 MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1407 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 CHA IN E SEM NG OND IC TOR UC 4 |
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